Evaluation and modeling of lanthanum diffusion in TiN/La2O3/HfSiON/SiO2/Si high-k stacks
نویسندگان
چکیده
Related Articles Kinetics of interdiffusion in semiconductor ternary quantum dots Appl. Phys. Lett. 101, 141906 (2012) Thermally induced interface chemistry in Mo/B4C/Si/B4C multilayered films J. Appl. Phys. 112, 054317 (2012) Probing the buried C60/Au(111) interface with atoms J. Chem. Phys. 136, 214706 (2012) Enhancement of perpendicular magnetic anisotropy through reduction of Co-Pt interdiffusion in (Co/Pt) multilayers Appl. Phys. Lett. 100, 142410 (2012) Organic salts as super-high rate capability materials for lithium-ion batteries Appl. Phys. Lett. 100, 091905 (2012)
منابع مشابه
Sol gel synthesis of multiphase lanthanum oxicarbonate and langasite thin films
Precursors of lanthanum oxide and of (3La2O3, 5Ga2O3, SiO2) system were first elaborated then thermally decomposed into polycrystalline lanthanum oxide and langasite La3Ga5SiO14. The as prepared lanthanum oxide powder was then hydrated and carbonated to give hydroxicarbonates: thermal decomposition of these complex system La2O3-X(OH)y(CO3)z was studied by Fourier Transform infrared spectroscopy...
متن کاملStudy of Lanthanum incorporated HfO2 nano-scale high-κ dielectric using Pulse Laser Deposition for metal–insulator–metal capacitor applications
Studies of Metal–insulator–metal (MIM) capacitors having high-κ La2O3\HfO2 dielectric stacks are fabricated using Pulse Laser Deposition (PLD) is carried out. Nano-sized La2O3\HfO2 dielectric stacks are deposited using PLD system under optimized pressure, substrate temperature and numbers of shots inside argon ambient chamber. The morphology of dielectric stacks is examined using AFM and the th...
متن کاملVolatile Guanidinato-based Metalorganic Precursors for Ald Process
Film properties of TaN-based metal (TaCN and TaSiN) have been precisely controlled for plasma enhanced ALD (PEALD) and thermal ALD with additives of N2 or NH3. Film resistivity (ρ) strongly depended on the nitrogen concentration of TaN-based metal. These films showed conformal step-coverage for high-aspect (>6) 50nm-wide trenches. Consequently, ALD TaN-based metal is promising for microelectron...
متن کاملThe interfaces of lanthanum oxide-based subnanometer EOT gate dielectrics
When pushing the gate dielectric thickness of metal-oxide-semiconductor (MOS) devices down to the subnanometer scale, the most challenging issue is the interface. The interfacial transition layers between the high-k dielectric/Si and between the high-k dielectric/gate metal become the critical constraints for the smallest achievable film thickness. This work presents a detailed study on the int...
متن کاملEffective Control of Flat-band Voltage in HfO2 Gate Dielectric with La2O3 Incorporation
Abstract—The origin of negative flat-band shift using La2O3 incorporation in HfO2 dielectrics has been extensively examined. From careful extraction of effective work function of gate electrode and fixed charges at each interface, it has been revealed that La2O3 at high-k/Si substrate or high-k/SiO2 interface has either large amount of positive fixed charges or an additional dipole of 0.36 V co...
متن کامل